Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)


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Resumo

The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.

Sobre autores

V. Davydov

Ioffe Institute; ITMO University

Autor responsável pela correspondência
Email: valery.davydov@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101

D. Usachov

Saint Petersburg State University

Email: valery.davydov@mail.ioffe.ru
Rússia, St. Petersburg, 199034

S. Lebedev

Ioffe Institute

Email: valery.davydov@mail.ioffe.ru
Rússia, St. Petersburg, 194021

A. Smirnov

Ioffe Institute; ITMO University

Email: valery.davydov@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101

V. Levitskii

Ioffe Institute

Email: valery.davydov@mail.ioffe.ru
Rússia, St. Petersburg, 194021

I. Eliseyev

Ioffe Institute; Saint Petersburg State University

Email: valery.davydov@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 199034

P. Alekseev

Ioffe Institute

Email: valery.davydov@mail.ioffe.ru
Rússia, St. Petersburg, 194021

M. Dunaevskiy

Ioffe Institute

Email: valery.davydov@mail.ioffe.ru
Rússia, St. Petersburg, 194021

O. Vilkov

Saint Petersburg State University

Email: valery.davydov@mail.ioffe.ru
Rússia, St. Petersburg, 199034

A. Rybkin

Saint Petersburg State University

Email: valery.davydov@mail.ioffe.ru
Rússia, St. Petersburg, 199034

A. Lebedev

Ioffe Institute

Email: valery.davydov@mail.ioffe.ru
Rússia, St. Petersburg, 194021

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