Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates


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Resumo

The method of chloride epitaxy is employed to grow β-Ga2O3 epitaxial layers on a c-sapphire substrate. Purified dry air is used as the source of oxygen. The layers are studied using the methods of X-ray diffraction, optical microscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman spectroscopy. It is found that the growth plane of the layers is (\(\bar 2\)01), parallel to the substrate surface. The layers consist of separate large crystalline grains of three different in-plane orientations rotated relative to each other in the growth plane by 60°. Misorientation can be caused by the different symmetry of the substrate and the epitaxial layer.

Sobre autores

V. Nikolaev

Perfect Crystals LLC; ITMO university; Ioffe Physical–Technical Institute

Autor responsável pela correspondência
Email: vladimir.i.nikolaev@gmail.com
Rússia, St. Petersburg, 194064; St. Petersburg, 197101; St. Petersburg, 194021

A. Pechnikov

Perfect Crystals LLC; ITMO university

Email: vladimir.i.nikolaev@gmail.com
Rússia, St. Petersburg, 194064; St. Petersburg, 197101

S. Stepanov

ITMO university; Peter the Great St. Petersburg Polytechnic University

Email: vladimir.i.nikolaev@gmail.com
Rússia, St. Petersburg, 197101; St. Petersburg, 195251

Sh. Sharofidinov

ITMO university; Ioffe Physical–Technical Institute

Email: vladimir.i.nikolaev@gmail.com
Rússia, St. Petersburg, 197101; St. Petersburg, 194021

A. Golovatenko

Perfect Crystals LLC; ITMO university; Ioffe Physical–Technical Institute

Email: vladimir.i.nikolaev@gmail.com
Rússia, St. Petersburg, 194064; St. Petersburg, 197101; St. Petersburg, 194021

I. Nikitina

Ioffe Physical–Technical Institute

Email: vladimir.i.nikolaev@gmail.com
Rússia, St. Petersburg, 194021

A. Smirnov

Ioffe Physical–Technical Institute

Email: vladimir.i.nikolaev@gmail.com
Rússia, St. Petersburg, 194021

V. Bugrov

ITMO university

Email: vladimir.i.nikolaev@gmail.com
Rússia, St. Petersburg, 197101

A. Romanov

ITMO university; Ioffe Physical–Technical Institute

Email: vladimir.i.nikolaev@gmail.com
Rússia, St. Petersburg, 197101; St. Petersburg, 194021

P. Brunkov

ITMO university; Ioffe Physical–Technical Institute

Email: vladimir.i.nikolaev@gmail.com
Rússia, St. Petersburg, 197101; St. Petersburg, 194021

D. Kirilenko

ITMO university; Ioffe Physical–Technical Institute

Email: vladimir.i.nikolaev@gmail.com
Rússia, St. Petersburg, 197101; St. Petersburg, 194021

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