Electronic States of Nanosystems Based on Cadmium Sulfide in the Zinc-Blende Form
- Авторлар: Zavodinsky V.G.1, Kuz’menko A.P.2
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Мекемелер:
- Institute of Materials Science, Russian Academy of Sciences
- South West State University
- Шығарылым: Том 53, № 10 (2019)
- Беттер: 1381-1385
- Бөлім: Surfaces, Interfaces, and Thin Films
- URL: https://ogarev-online.ru/1063-7826/article/view/207233
- DOI: https://doi.org/10.1134/S1063782619100269
- ID: 207233
Дәйексөз келтіру
Аннотация
The electronic structure of nanosystems based on cadmium sulfide in the zinc-blende form (zb-CdS) is investigated using the method of density functional theory with the application of pseudopotentials. It is shown that this approach makes it possible to adequately describe the electronic states of this material. It is found that the (100)-zb-CdS surface is characterized by a metal-like electronic-state density, while the (110)-zb-CdS surface corresponds to the band gap at the Fermi level and nanofilms with this orientation can be used as a material for semiconductor devices. Epitaxial layered (110)-zb-CdS–Si nanosystems also manifest semiconductor properties.
Негізгі сөздер
Авторлар туралы
V. Zavodinsky
Institute of Materials Science, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: vzavod@mail.ru
Ресей, Khabarovsk, 680042
A. Kuz’menko
South West State University
Email: vzavod@mail.ru
Ресей, Kursk, 305040
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