On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation
- Авторлар: Ikonnikov A.V.1,2, Bovkun L.S.1,3, Rumyantsev V.V.1,2, Krishtopenko S.S.1,4, Aleshkin V.Y.1,2, Kadykov A.M.1,4, Orlita M.3, Potemski M.3, Gavrilenko V.I.1,2, Morozov S.V.1,2, Dvoretsky S.A.5, Mikhailov N.N.5,6
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Мекемелер:
- Institute for Physics of Microstructures
- Lobachevsky State University of Nizhny Novgorod
- Laboratoire National des Champs Magnetiques Intenses (LNCMI-G)
- Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM
- Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Шығарылым: Том 51, № 12 (2017)
- Беттер: 1531-1536
- Бөлім: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://ogarev-online.ru/1063-7826/article/view/201959
- DOI: https://doi.org/10.1134/S1063782617120090
- ID: 201959
Дәйексөз келтіру
Аннотация
The magnetoabsorption and interband photoconductivity spectra of HgTe/CdHgTe quantum wells exhibiting p-type conductivity are studied at different temperatures. It is shown that, for a sample with a normal band structure, the long-wavelength edge of the spectra shifts to higher energies with temperature increase, indicating an increase of the band gap in the quantum well. For a sample with an inverted band structure, it is for the first time found that the long-wavelength cut-off shifts to lower energies due to the topological phase transition from the inverted band structure to the normal structure with temperature increase. The experimental data are in agreement with the results of theoretical band-structure calculations based on the Kane model.
Авторлар туралы
A. Ikonnikov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: antikon@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
L. Bovkun
Institute for Physics of Microstructures; Laboratoire National des Champs Magnetiques Intenses (LNCMI-G)
Email: antikon@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Grenoble, FR-38042
V. Rumyantsev
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: antikon@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. Krishtopenko
Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM
Email: antikon@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Montpellier, 34095
V. Aleshkin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: antikon@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. Kadykov
Institute for Physics of Microstructures; Laboratoire Charles Coulomb (L2C), UMR CNRS 5221 and UM
Email: antikon@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Montpellier, 34095
M. Orlita
Laboratoire National des Champs Magnetiques Intenses (LNCMI-G)
Email: antikon@ipmras.ru
Франция, Grenoble, FR-38042
M. Potemski
Laboratoire National des Champs Magnetiques Intenses (LNCMI-G)
Email: antikon@ipmras.ru
Франция, Grenoble, FR-38042
V. Gavrilenko
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: antikon@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. Morozov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: antikon@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. Dvoretsky
Institute of Semiconductor Physics, Siberian Branch
Email: antikon@ipmras.ru
Ресей, Novosibirsk, 630090
N. Mikhailov
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: antikon@ipmras.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
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