InGaN/GaN light-emitting diode microwires of submillimeter length

W. V. Lundin; S. N. Rodin; A. V. Sakharov; E. Yu. Lundina; S. O. Usov; Yu. M. Zadiranov; S. I. Troshkov; A. F. Tsatsulnikov

doi:10.1134/S1063782617010122

InGaN/GaN light-emitting diode microwires of submillimeter length

Авторлар: Lundin W.V.¹, Rodin S.N.¹, Sakharov A.V.¹, Lundina E.Y.¹, Usov S.O.², Zadiranov Y.M.¹, Troshkov S.I.¹, Tsatsulnikov A.F.²^,3
Мекемелер:
1. Ioffe Physical–Technical Institute
2. Research and Engineering Center of Submicron Heterostructures for Microelectronics
3. St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Шығарылым: Том 51, № 1 (2017)
Беттер: 100-103
Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
URL: https://ogarev-online.ru/1063-7826/article/view/199350
DOI: https://doi.org/10.1134/S1063782617010122
ID: 199350

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат
Рұқсат жабық

Рұқсат берілді
Рұқсат жабық

Тек жазылушылар үшін

Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell structures 400–600 μm in length are grown by metal–organic vapor-phase epitaxy on sapphire and silicon substrates. The technology of the titanium-nanolayer-induced ultrafast growth of nanowire and microwire crystals is used. As a current is passed through the microcrystals, an electroluminescence signal is observed in the blue–green spectral region.