Email this article Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy
- Authors: Timoshnev S.N.1, Mizerov A.M.1, Sobolev M.S.1, Nikitina E.V.1
-
Affiliations:
- Saint Petersburg National Research Academic University of the Russian Academy of Sciences
- Issue: Vol 52, No 5 (2018)
- Pages: 660-663
- Section: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://ogarev-online.ru/1063-7826/article/view/203319
- DOI: https://doi.org/10.1134/S1063782618050342
- ID: 203319
Cite item
Open Access
Access granted
Subscription Access
Abstract
The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed.
About the authors
S. N. Timoshnev
Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Author for correspondence.
Email: timoshnev@mail.ru
Russian Federation, St. Petersburg, 194021
A. M. Mizerov
Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Email: timoshnev@mail.ru
Russian Federation, St. Petersburg, 194021
M. S. Sobolev
Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Email: timoshnev@mail.ru
Russian Federation, St. Petersburg, 194021
E. V. Nikitina
Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Email: timoshnev@mail.ru
Russian Federation, St. Petersburg, 194021
Supplementary files
