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Том 50, № 2 (2016)
Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy
Dunaev A., Murin D., Pivovarenok S.
PDF
(Eng)
Том 52, № 9 (2018)
Superficial Defect Formation in CdTe under the Radiation Effect of a CO2 Laser
Shkumbatjuk P.
PDF
(Eng)
Том 53, № 16 (2019)
The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope
Prasolov N., Ermakov I., Gutkin A., Solov’ev V., Dorogin L., Konnikov S., Brunkov P.
PDF
(Eng)
Том 53, № 14 (2019)
J–V Characteristic of p–n Structure Formed on n-GaAs Surface by Ar+ Ion Beam
Mikoushkin V., Kalinovskii V., Kontrosh E., Makarevskaya E.
PDF
(Eng)
Том 52, № 16 (2018)
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode
Rabehi A., Bideux L., Gruzza B., Monier G., Hatem-Kacha A., Guermoui M., Ziane A., Akkal B., Benamara Z., Amrani M., Robert-Goumet C.
PDF
(Eng)
Том 50, № 4 (2016)
Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se2 thin-film solar cells
Kosyachenko L., Lytvynenko V., Maslyanchuk O.
PDF
(Eng)
Том 53, № 16 (2019)
Femtosecond Laser-Induced Periodical Nanomodification of Surface Composition
Ionin A., Kudryashov S., Makarov S.
PDF
(Eng)
Том 53, № 13 (2019)
The Surface Preparation of Thermoelectric Materials for Deposition of Thin-Film Contact Systems
Shtern M., Karavaev I., Shtern Y., Kozlov A., Rogachev M.
PDF
(Eng)
Том 52, № 12 (2018)
Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current
Akimov A., Klimov A., Epov V.
PDF
(Eng)
Том 50, № 4 (2016)
Induced surface states of the ultrathin Ba/3C-SiC(111) interface
Benemanskaya G., Dementev P., Kukushkin S., Lapushkin M., Senkovskiy B., Timoshnev S.
PDF
(Eng)
Том 53, № 16 (2019)
Emission of Light from Compositionally Graded CdSSe/CdS Heterostructure with Smooth Near-surface Excitonic Potential
Grigorieva N., Sel’kin A.
PDF
(Eng)
Том 53, № 13 (2019)
Comparative Analysis of Double Gate Junction Less (DG JL) and Gate Stacked Double Gate Junction Less (GS DG JL) MOSFETs
Shrey Arvind Singh , Shweta Tripathi
PDF
(Eng)
Том 52, № 9 (2018)
Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface
Smagina Z., Zinovyev V., Krivyakin G., Rodyakina E., Kuchinskaya P., Fomin B., Yablonskiy A., Stepikhova M., Novikov A., Dvurechenskii A.
PDF
(Eng)
Том 50, № 3 (2016)
Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation
Popov V.
PDF
(Eng)
Том 53, № 15 (2019)
Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds
Vigdorovich E.
PDF
(Eng)
Том 53, № 13 (2019)
Analytical Modeling of Surface Potential and Drain Current of Hetero-Dielectric DG TFET and Its Analog and Radio-Frequency Performance Evaluation
Patel S., Kumar D., Chaurasiya N., Tripathi S.
PDF
(Eng)
Том 50, № 3 (2016)
Role of Acoustoelectric Interaction in the Formation of Nanoscale Periodic Structures of Adsorbed Atoms
Peleshchak R., Lazurchak I., Kuzyk O., Dan’kiv O., Zegrya G.
PDF
(Eng)
Том 53, № 15 (2019)
Dependence of the Surface Morphology and Structure of CuIn0.95Ga0.05Se2 Films on the Selenization Temperature
Gadzhiev T., Aliev M., Asvarov A., Gadzhieva R., Bilalov B., Ismailov A., Shomakhov Z.
PDF
(Eng)
Том 53, № 10 (2019)
Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process
Prasolov N., Gutkin A., Brunkov P.
PDF
(Eng)
Том 50, № 5 (2016)
Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure
Il’inskaya N., Karandashev S., Karpukhina N., Lavrov A., Matveev B., Remennyi M., Stus N., Usikova A.
PDF
(Eng)
Том 50, № 3 (2016)
Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well
Hasanov K., Huseynov J., Dadashova V., Aliyev F.
PDF
(Eng)
Том 53, № 15 (2019)
State of the Surface of Polycrystalline Silver after Exposure to Activated Oxygen
Ashkhotov O., Khubezhov S., Ashkhotova I.
PDF
(Eng)
Том 53, № 9 (2019)
Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes
Ikonnikov A., Chernichkin V., Dudin V., Akopian D., Akimov A., Klimov A., Tereshchenko O., Ryabova L., Khokhlov D.
PDF
(Eng)
Том 50, № 5 (2016)
Atomic steps on an ultraflat Si(111) surface upon sublimation
Sitnikov S., Latyshev A., Kosolobov S.
PDF
(Eng)
Том 50, № 2 (2016)
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
Lobanov D., Novikov A., Andreev B., Bushuykin P., Yunin P., Skorohodov E., Krasilnikova L.
PDF
(Eng)
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