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Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers
Andreev B.A., Lobanov D.N., Krasil’nikova L.V., Bushuykin P.A., Yablonskiy A.N., Novikov A.V., Davydov V.Y., Yunin P.A., Kalinnikov M.I., Skorohodov E.V., Krasil’nik Z.F.
Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics
Yurasov D.V., Baidakova N.A., Verbus V.A., Gusev N.S., Mashin A.I., Morozova E.E., Nezhdanov A.V., Novikov A.V., Skorohodov E.V., Shengurov D.V., Yablonskiy A.N.
Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality
Khrebtov A.I., Reznik R.R., Ubyivovk E.V., Litvin A.P., Skurlov I.D., Parfenov P.S., Kulagina A.S., Danilov V.V., Cirlin G.E.
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates
Mizerov A.M., Timoshnev S.N., Nikitina E.V., Sobolev M.S., Shubin K.Y., Berezovskaia T.N., Mokhov D.V., Lundin W.V., Nikolaev A.E., Bouravleuv A.D.
GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates
Abramkin D.S., Petrushkov M.O., Putyato M.A., Semyagin B.R., Emelyanov E.A., Preobrazhenskii V.V., Gutakovskii A.K., Shamirzaev T.S.
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties
Sorokin S.V., Avdienko P.S., Sedova I.V., Kirilenko D.A., Yagovkina M.A., Smirnov A.N., Davydov V.Y., Ivanov S.V.
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