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Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
Sokolova Z.N., Bakhvalov K.V., Lyutetskiy A.V., Pikhtin N.A., Tarasov I.S., Asryan L.V.
Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate
Tikhov S.V., Gorshkov O.N., Antonov I.N., Tetelbaum D.I., Mikhaylov A.N., Belov A.I., Morozov A.I., Karakolis P., Dimitrakis P.
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation
Tarasova E.A., Khananova A.V., Obolensky S.V., Zemlyakov V.E., Sveshnikov Y.N., Egorkin V.I., Ivanov V.A., Medvedev G.V., Smotrin D.S.
Determining the Hydrogen Concentration from the Photovoltage of Pd–Oxide–InP MIS Structures
Grebenshchikova E.A., Salikhov K.M., Sidorov V.G., Shutaev V.A., Yakovlev Y.P.
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