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Vol 50, No 3 (2016)
Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO2/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy
Pchelyakov O.P., Mikhlin Y.L., Parshin A.S., Kushchenkov S.A.
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(Eng)
Vol 52, No 12 (2018)
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation
Venediktov M.M., Dukov D.I., Krevskiy M.A., Metelkin I.O., Chukov G.V., Elesin V.V., Obolensky S.V., Bozhen’kina A.D., Tarasova E.A., Fefelov A.G.
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(Eng)
Vol 50, No 3 (2016)
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation
Tarasova E.A., Khananova A.V., Obolensky S.V., Zemlyakov V.E., Sveshnikov Y.N., Egorkin V.I., Ivanov V.A., Medvedev G.V., Smotrin D.S.
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(Eng)
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