Informaçao sobre o Autor
Lundin, V. W.
| Edição | Seção | Título | Arquivo |
| Volume 50, Nº 10 (2016) | Physics of Semiconductor Devices | effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis |