Информация об авторе

Davydov, V. Yu.

Выпуск	Раздел	Название	Файл
Том 50, № 3 (2016)	Fabrication, Treatment, and Testing of Materials and Structures	Optical and Structural Properties of Composite Si:Au Layers Formed by Laser Electrodispersion
Том 50, № 5 (2016)	Fabrication, Treatment, and Testing of Materials and Structures	On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n⁺-GaN substrates
Том 50, № 8 (2016)	Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena	Elastic strains and delocalized optical phonons in AlN/GaN superlattices
Том 51, № 8 (2017)	Carbon Systems	Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)
Том 51, № 12 (2017)	XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017	Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen
Том 52, № 5 (2018)	XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology	Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE
Том 52, № 6 (2018)	Fabrication, Treatment, and Testing of Materials and Structures	Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers
Том 52, № 14 (2018)	Graphene	High Quality Graphene Grown by Sublimation on 4H-SiC (0001)
Том 53, № 8 (2019)	Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena	Template Synthesis of Monodisperse Submicrometer Spherical Nanoporous Silicon Particles
Том 53, № 8 (2019)	Fabrication, Treatment, and Testing of Materials and Structures	Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties
Том 53, № 10 (2019)	Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019	Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers
Том 53, № 11 (2019)	Surfaces, Interfaces, and Thin Films	Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions
Том 53, № 14 (2019)	Nanostructures Characterization	Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC

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