Автор туралы ақпарат
Karpov, S. Yu.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 50, № 10 (2016) | Physics of Semiconductor Devices | effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis |