Author Details
Cherkashin, N. A.
| Issue | Section | Title | File |
| Vol 50, No 2 (2016) | Physics of Semiconductor Devices | Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation | |
| Vol 50, No 9 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs |