Автор туралы ақпарат

Kotlyar, K. P.

Шығарылым Бөлім Атауы Файл
Том 51, № 11 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate
Том 52, № 2 (2018) Surfaces, Interfaces, and Thin Films Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition
Том 52, № 5 (2018) XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization The Features of GaAs Nanowire SEM Images
Том 52, № 5 (2018) XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates
Том 52, № 11 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon
Том 52, № 11 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer
Том 52, № 12 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Solar Cell Based on Core/Shell Nanowires
Том 52, № 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY InGaN/GaN QDs Nanorods: Processing and Properties
Том 52, № 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications
Том 52, № 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. QUANTUM WELLS AND QUANTUM DOTS Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate