InGaN/GaN QDs Nanorods: Processing and Properties

K. P. Kotlyar; I. P. Soshnikov; I. A. Morozov; T. N. Berezovskaya; N. V. Kryzhanovskaya; D. A. Kudryashov; V. V. Lysak

doi:10.1134/S1063782618160145

InGaN/GaN QDs Nanorods: Processing and Properties

Authors: Kotlyar K.P.¹, Soshnikov I.P.¹^,2^,3, Morozov I.A.¹, Berezovskaya T.N.¹, Kryzhanovskaya N.V.¹, Kudryashov D.A.¹, Lysak V.V.¹
Affiliations:
1. St. Petersburg Academic University
2. Ioffe Institute
3. Institute for Analytical Instrumentation
Issue: Vol 52, No 16 (2018)
Pages: 2096-2098
Section: 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY
URL: https://ogarev-online.ru/1063-7826/article/view/205392
DOI: https://doi.org/10.1134/S1063782618160145
ID: 205392

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Abstract

InGaN/GaN nanorod structure is presented for the fabrication of light-emitting diodes by means of plasma-chemical etching. Processes of the etching of nanorods and the defect passivation in a planar InGaN/GaN quantum dot heterostructure are studied. The obtained results allow creating the light-emitting diode nanostructure with a greater efficiency compared to the classical planar technology.