| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing |
|
| Том 51, № 10 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region |
|
| Том 52, № 2 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure |
|
| Том 52, № 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface |
|
| Том 52, № 9 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films |
|
| Том 53, № 3 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Crystallization of Amorphous Germanium Films and Multilayer a-Ge/a-Si Structures upon Exposure to Nanosecond Laser Radiation |
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