| Issue |
Section |
Title |
File |
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well |
|
| Vol 52, No 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW |
|
| Vol 52, No 13 (2018) |
Physics of Semiconductor Devices |
GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm) |
|
| Vol 53, No 2 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method |
|
| Vol 53, No 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy |
|
| Vol 53, No 12 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy |
|
| Vol 53, No 16 (2019) |
Nanostructures Technology |
Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD |
|
