| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon |
|
| 卷 50, 编号 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Resonant features of the terahertz generation in semiconductor nanowires |
|
| 卷 50, 编号 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
|
| 卷 50, 编号 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Polarization of the photoluminescence of quantum dots incorporated into quantum wires |
|
| 卷 52, 编号 1 (2018) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases |
|
| 卷 52, 编号 1 (2018) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires |
|
| 卷 52, 编号 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
The Features of GaAs Nanowire SEM Images |
|
| 卷 52, 编号 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy |
|
| 卷 52, 编号 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Solar Cell Based on Core/Shell Nanowires |
|
| 卷 52, 编号 12 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates |
|
| 卷 52, 编号 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications |
|
| 卷 52, 编号 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy |
|
| 卷 53, 编号 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates |
|
| 卷 53, 编号 12 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers |
|
| 卷 53, 编号 14 (2019) |
Nanostructures Characterization |
Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates |
|
