期 |
标题 |
文件 |
卷 53, 编号 12 (2019) |
Effect of the Samarium Impurity on the Local Structure of Se95Te5 Chalcogenide Glassy Semiconductor and Current Passage through Al–Se95Te5〈Sm〉–Te Structures |
 (Eng)
|
Ataeva S., Mekhtieva S., Isaev A., Garibova S., Huseynova A.
|
卷 53, 编号 12 (2019) |
Charge Transfer in Gap Structures Based on the Chalcogenide System (As2Se3)100 –xBix |
 (Eng)
|
Castro R., Khanin S., Smirnov A., Kononov A.
|
卷 53, 编号 12 (2019) |
Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor |
 (Eng)
|
Sovtus N., Mynbaev K.
|
卷 53, 编号 12 (2019) |
Synthesis and Characterization of Semiconductor Polymer Doped with FeCl3 and I2 |
 (Eng)
|
Bouabdallah Daho ., Fontanesi C., Messori M., Dehbi A., Belfedal A.
|
卷 53, 编号 11 (2019) |
Structure and Optical Properties of Chalcogenide Glassy Semiconductors of the As–Ge–Se System |
 (Eng)
|
Isayev A., Mekhtiyeva S., Mammadova H., Alekberov R.
|
卷 53, 编号 11 (2019) |
Structure of Se95As5 Chalcogenide Glassy Semiconductor Doped by EuF3 Impurity |
 (Eng)
|
Garibova S., Isayev A., Mekhtiyeva S., Atayeva S.
|
卷 53, 编号 11 (2019) |
Spectra of SmS Films in the Far- and Mid-Infrared Regions |
 (Eng)
|
Ulashkevich Y., Kaminski V., Soloviev S., Sharenkova N.
|
卷 53, 编号 11 (2019) |
Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase (\({{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}\) = 21.5 mol %) |
 (Eng)
|
Undalov Y., Terukov E., Trapeznikova I.
|
卷 53, 编号 7 (2019) |
Dependence of the Conductivity of Porous Silicon Layers on the Carrier-Transport Direction |
 (Eng)
|
Guseva E., Forsh E.
|
卷 53, 编号 5 (2019) |
Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses |
 (Eng)
|
Marchenko A., Seregin P., Terukov E., Shakhovich K.
|
卷 53, 编号 1 (2019) |
The Effect of Crystallization Conditions on the Spectral Characteristics of Tetraphenylporphyrin Thin Films |
 (Eng)
|
Elistratova M., Zakharova I., Li G., Dubrovin R., Sreseli O.
|
卷 52, 编号 13 (2018) |
Specific Features of the Electron Structure of ZnTPP Aggregated Forms: Data of Optical Measurements and Quantum-Chemical Calculations |
 (Eng)
|
Zakharova I., Elistratova M., Romanov N., Kvyatkovskii O.
|
卷 52, 编号 12 (2018) |
Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe |
 (Eng)
|
Fefelov S., Kazakova L., Bogoslovskiy N., Tsendin K.
|
卷 52, 编号 10 (2018) |
Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix (\({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %) |
 (Eng)
|
Undalov Y., Terukov E., Trapeznikova I.
|
卷 52, 编号 9 (2018) |
Low-Frequency Dielectric Relaxation in Iron-Doped Ge28.5Pb15S56.5 Glassy System |
 (Eng)
|
Castro R., Grabko G., Kononov A.
|
卷 52, 编号 8 (2018) |
Dielectric Relaxation in Thin Layers of the Ge28.5Pb15S56.5 Glassy System |
 (Eng)
|
Castro R., Anisimova N., Kononov A.
|
卷 52, 编号 1 (2018) |
On the Electret Effect in Polymer–Ferroelectric Piezoceramic Composites with Various Values of the Electronegativity of the Polymer Matrix and Piezophase Cations |
 (Eng)
|
Kurbanov M., Ramazanova I., Dadashev Z., Yusifova U., Huseynova G., Azizova K., Farajzadeh I.
|
卷 51, 编号 6 (2017) |
Influence of the samarium impurity on the structure and surface morphology of Se95Te5 chalcogenide glassy semiconductor |
 (Eng)
|
Mekhtiyeva S., Atayeva S., Isayev A., Zeynalov V.
|
卷 51, 编号 5 (2017) |
Energy transfer from TPD to CdSe/CdS/ZnS colloidal nanocrystals |
 (Eng)
|
Kurochkin N., Katsaba A., Ambrozevich S., Vitukhnovsky A., Vashchenko A., Tananaev P.
|
卷 51, 编号 4 (2017) |
Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide |
 (Eng)
|
Marchenko A., Terukov E., Egorova A., Kiselev V., Seregin P.
|
卷 50, 编号 9 (2016) |
Photoluminescence spectra of thin films of ZnTPP–C60 and CuTPP–C60 molecular complexes |
 (Eng)
|
Elistratova M., Zakharova I., Romanov N., Panevin V., Kvyatkovskii O.
|
卷 50, 编号 7 (2016) |
Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode |
 (Eng)
|
Fefelov S., Kazakova L., Arsova D., Kozyukhin S., Tsendin K., Prikhodko O.
|
卷 50, 编号 6 (2016) |
Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen |
 (Eng)
|
Ivanova E., Sitnikova A., Aleksandrov O., Zamoryanskaya M.
|
卷 50, 编号 5 (2016) |
Piezoresistive and posistor effects in polymer-semiconductor and polymer-ferropiezoceramic composites |
 (Eng)
|
Mamedov H., Parali L., Kurbanov M., Bayramov A., Tatardar F., Sabikoglu I.
|
卷 50, 编号 5 (2016) |
Lifetime of excitons localized in Si nanocrystals in amorphous silicon |
 (Eng)
|
Gusev O., Belolipetskiy A., Yassievich I., Kukin A., Terukova E., Terukov E.
|
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