XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015

Шығарылым Атауы Файл
Том 50, № 1 (2016) Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer PDF
(Eng)
Rykov A., Dorokhin M., Malysheva E., Demina P., Vikhrova O., Zdoroveishev A.
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