XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015
| 期 | 标题 | 文件 | |
| 卷 50, 编号 1 (2016) | Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer |
 (Eng) |
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| Rykov A., Dorokhin M., Malysheva E., Demina P., Vikhrova O., Zdoroveishev A. | |||
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