| Edição |
Título |
Arquivo |
| Volume 53, Nº 2 (2019) |
On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method |
(Eng)
|
|
Levin R., Nevedomskyi V., Bazhenov N., Zegrya G., Pushnyi B., Mizerov M.
|
| Volume 53, Nº 2 (2019) |
Oxide Removal from the InSb Plate Surface to Produce Lateral Spin Valves |
(Eng)
|
|
Viglin N., Gribov I., Tsvelikhovskaya V., Patrakov E.
|
| Volume 53, Nº 2 (2019) |
Technique for the Electrochemical Capacitance–Voltage Profiling of Heavily Doped Structures with a Sharp Doping Profile |
(Eng)
|
|
Frolov D., Yakovlev G., Zubkov V.
|
| Volume 53, Nº 2 (2019) |
Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers |
(Eng)
|
|
Erofeev E., Fedin I., Fedina V., Fazleev A.
|
| Volume 53, Nº 1 (2019) |
Photoanodization of n-Si in the Presence of Hydrogen Peroxide: Voltage Dependence |
(Eng)
|
|
Li G., Astrova E., Lihachev A.
|
| Volume 53, Nº 1 (2019) |
Deposition of Silicon Films Doped with Boron and Phosphorus by the Gas-Jet Plasma-Chemical Method |
(Eng)
|
|
Shchukin V., Sharafutdinov R., Konstantinov V.
|
| Volume 53, Nº 1 (2019) |
Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe |
(Eng)
|
|
Shvets V., Azarov I., Marin D., Yakushev M., Rykhlitsky S.
|
| Volume 52, Nº 13 (2018) |
Determination of the Region of Thermal Stability of the Size and Phase Composition of Silver-Sulfide Semiconductor Nanoparticles |
(Eng)
|
|
Sadovnikov S., Vovkotrub E.
|
| Volume 52, Nº 13 (2018) |
Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations |
(Eng)
|
|
Semenov A., Nechaev D., Troshkov S., Nashchekin A., Brunkov P., Jmerik V., Ivanov S.
|
| Volume 52, Nº 13 (2018) |
Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices |
(Eng)
|
|
Kudryashov D., Gudovskikh A., Baranov A.
|
| Volume 52, Nº 13 (2018) |
New Manufacturing Approaches to Texture Formation and Thermal Expansion Matching in the Design of Highly Efficient Silicon Solar Photoconverters |
(Eng)
|
|
Nikitin S., Bobyl A., Avezova N., Terukov E.
|
| Volume 52, Nº 12 (2018) |
Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation |
(Eng)
|
|
Ilin A., Matsukatova A., Forsh P., Vygranenko Y.
|
| Volume 52, Nº 10 (2018) |
On the Growth of FeIn2S2Se2 Single Crystals and the Study of their Properties |
(Eng)
|
|
Bodnar I., Detkov S., Kasyuk Y., Fedotova Y.
|
| Volume 52, Nº 10 (2018) |
Influence of the Synthesis Conditions and Tin Nanoparticles on the Structure and Properties of a-C:H〈Sn〉 Composite Thin Films |
(Eng)
|
|
Ryaguzov A., Nemkayeva R., Guseinov N.
|
| Volume 52, Nº 10 (2018) |
Copper(I) Selenide Thin Films: Composition, Morphology, Structure, and Optical Properties |
(Eng)
|
|
Maskaeva L., Fedorova E., Markov V., Kuznetsov M., Lipina O., Pozdin A.
|
| Volume 52, Nº 10 (2018) |
Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide |
(Eng)
|
|
Popov V., Antonov V., Vdovin V.
|
| Volume 52, Nº 10 (2018) |
Study of the Effective Refractive Index Profile in Self-Assembling Nanostructured ITO Films |
(Eng)
|
|
Markov L., Pavluchenko A., Smirnova I., Pavlov S.
|
| Volume 52, Nº 10 (2018) |
Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography |
(Eng)
|
|
Lundin W., Tsatsulnikov A., Rodin S., Sakharov A., Usov S., Mitrofanov M., Levitskii I., Evtikhiev V.
|
| Volume 52, Nº 10 (2018) |
Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions |
(Eng)
|
|
Karlina L., Vlasov A., Soshnikov I., Smirnova I., Ber B., Smirnov A.
|
| Volume 52, Nº 9 (2018) |
Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method |
(Eng)
|
|
Anisimov A., Wolfson A., Mokhov E.
|
| Volume 52, Nº 8 (2018) |
Crystal Structure and Band Gap of (MnIn2S4)1–x • (AgIn5S8)x Alloys |
(Eng)
|
|
Bodnar I., Tkhan C.
|
| Volume 52, Nº 7 (2018) |
On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers |
(Eng)
|
|
Mamutin V., Vasilyev A., Lyutetskiy A., Ilyinskaya N., Zadiranov Y., Sofronov A., Firsov D., Vorobjev L., Maleev N., Ustinov V.
|
| Volume 52, Nº 7 (2018) |
Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching |
(Eng)
|
|
Mitrofanov M., Levitskii I., Voznyuk G., Tatarinov E., Rodin S., Kaliteevski M., Evtikhiev V.
|
| Volume 52, Nº 6 (2018) |
Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers |
(Eng)
|
|
Malin T., Milakhin D., Mansurov V., Galitsyn Y., Kozhuhov A., Ratnikov V., Smirnov A., Davydov V., Zhuravlev K.
|
| Volume 52, Nº 6 (2018) |
Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers |
(Eng)
|
|
Ivanova M., Kachemtsev A., Mikhaylov A., Filatov D., Gorshkov A., Volkova N., Chalkov V., Shengurov V.
|
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