Отправить статью по E-mail Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation
- Авторы: Sitnikov S.V.1, Rodyakina E.E.1,2, Latyshev A.V.1,2
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Учреждения:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Выпуск: Том 53, № 6 (2019)
- Страницы: 795-799
- Раздел: Surfaces, Interfaces, and Thin Films
- URL: https://ogarev-online.ru/1063-7826/article/view/206336
- DOI: https://doi.org/10.1134/S106378261906023X
- ID: 206336
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Аннотация
By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.
Об авторах
S. Sitnikov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: sitnikov@isp.nsc.ru
Россия, Novosibirsk, 630090
E. Rodyakina
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: sitnikov@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
A. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: sitnikov@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
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