Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an Ar+ Ion Beam

Аннотация

The elemental and chemical compositions throughout the thickness of the GaAs native oxide layer slightly irradiated by Ar⁺ ions have been studied by synchrotron-based photoelectron spectroscopy at different photon energies enabling variation of probing depth. The presence of only two phases was observed: of the gallium oxide Ga₂O₃ and elementary arsenic As^o generated due to complete decay of arsenic oxides under the ion irradiation. Depth composition profiles were determined nondestructively. Despite inhomogeneous depth distribution, these profiles demonstrated domination (90 at %) of the dielectric Ga₂O₃ phase virtually throughout all the oxide thickness (~2 nm).