Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells


Цитировать

Полный текст

Открытый доступ Открытый доступ
Доступ закрыт Доступ предоставлен
Доступ закрыт Только для подписчиков

Аннотация

The mobility and quantum time of Dirac electrons in HgTe quantum wells with near-critical thickness corresponding to the transition from the direct to inverted spectrum are experimentally and theoretically investigated. The nonmonotonic dependence of the mobility on the electron concentration is experimentally established. The theory of the scattering of Dirac electrons by impurities and irregularities of the well boundaries leading to well thickness fluctuations is constructed. The comparison of this theory with an experiment shows their good agreement and explains the observed nonmonotonic behavior by a decrease in the ratio between the de Broglie wavelength of Dirac electrons and the characteristic size of irregularities with increasing electron concentration. It is established that the transport time is larger than the quantum time by almost an order of magnitude in the case of the dominance of roughness scattering. The transition from macroscopic to mesoscopic samples is studied and an abrupt decrease in both the mobility and quantum time is observed. This behavior is attributed to the size effect on the free path length.

Об авторах

A. Dobretsova

Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch; Novosibirsk State University

Автор, ответственный за переписку.
Email: DobretsovaAA@gmail.com
Россия, Novosibirsk, 630090; Novosibirsk, 630090

Z. Kvon

Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch; Novosibirsk State University

Email: DobretsovaAA@gmail.com
Россия, Novosibirsk, 630090; Novosibirsk, 630090

L. Braginskii

Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch; Novosibirsk State University

Email: DobretsovaAA@gmail.com
Россия, Novosibirsk, 630090; Novosibirsk, 630090

M. Entin

Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch; Novosibirsk State University

Email: DobretsovaAA@gmail.com
Россия, Novosibirsk, 630090; Novosibirsk, 630090

N. Mikhailov

Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch; Novosibirsk State University

Email: DobretsovaAA@gmail.com
Россия, Novosibirsk, 630090; Novosibirsk, 630090

Дополнительные файлы

Доп. файлы
Действие
1. JATS XML

© Pleiades Publishing, Ltd., 2018

Согласие на обработку персональных данных

 

Используя сайт https://journals.rcsi.science, я (далее – «Пользователь» или «Субъект персональных данных») даю согласие на обработку персональных данных на этом сайте (текст Согласия) и на обработку персональных данных с помощью сервиса «Яндекс.Метрика» (текст Согласия).