Thermoelectric properties of the Mg2Ge0.3Sn0.7 solid solution with p-type conductivity
- Autores: Isachenko G.N.1,2, Samunin A.Y.1, Zaitsev V.K.1, Gurieva E.A.1, Konstantinov P.P.1
-
Afiliações:
- Ioffe Institute
- ITMO University
- Edição: Volume 51, Nº 8 (2017)
- Páginas: 1005-1008
- Seção: XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
- URL: https://ogarev-online.ru/1063-7826/article/view/200813
- DOI: https://doi.org/10.1134/S1063782617080127
- ID: 200813
Citar
Resumo
The thermoelectric properties of the Mg2Ge0.3Sn0.7 solid solution doped with Ga and Li are studied. The samples with a hole concentration as high as 5 × 1020 cm–3 are obtained. The temperature dependences of the thermopower, electrical conductivity, and thermal conductivity are measured in the range from room temperature to 800 K. A higher mobility of free charge carriers is observed in the samples doped with lithium than in the samples doped with gallium. The largest thermoelectric figure of merit in the samples under study amounts to 0.42 at 700 K.
Sobre autores
G. Isachenko
Ioffe Institute; ITMO University
Autor responsável pela correspondência
Email: g.isachenko@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101
A. Samunin
Ioffe Institute
Email: g.isachenko@mail.ioffe.ru
Rússia, St. Petersburg, 194021
V. Zaitsev
Ioffe Institute
Email: g.isachenko@mail.ioffe.ru
Rússia, St. Petersburg, 194021
E. Gurieva
Ioffe Institute
Email: g.isachenko@mail.ioffe.ru
Rússia, St. Petersburg, 194021
P. Konstantinov
Ioffe Institute
Email: g.isachenko@mail.ioffe.ru
Rússia, St. Petersburg, 194021
Arquivos suplementares
