Отправить статью по E-mail Electrical and Photoelectric Properties of the TiN/p-InSe Heterojunction
- Авторы: Orletsky I.G.1, Ilashchuk M.I.1, Brus V.V.1, Marianchuk P.D.1, Solovan M.M.1, Kovalyuk Z.D.1
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Учреждения:
- Yuri Fedkovych Chernivtsi National University
- Выпуск: Том 50, № 3 (2016)
- Страницы: 334-338
- Раздел: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://ogarev-online.ru/1063-7826/article/view/196878
- DOI: https://doi.org/10.1134/S1063782616030167
- ID: 196878
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Аннотация
The conditions for fabricating photosensitive TiN/p-InSe heterojunctions by the reactive-magnetron sputtering of thin titanium-nitride films onto freshly cleaved p-InSe single-crystal substrates is investigated. The presence of a tunnel-transparent high-resistivity In2Se3 layer at the heterojunction is revealed from analysis of the I–V characteristics, and the effect of this layer on the electrical properties and photosensitivity spectra of the heterostructures is analyzed. The dominant current transport mechanisms through the TiN/p-InSe energy barrier under forward and reverse bias are determined.
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Об авторах
I. Orletsky
Yuri Fedkovych Chernivtsi National University
Автор, ответственный за переписку.
Email: i.orletskyi@chnu.edu.ua
Украина, Chernivtsi, 58012
M. Ilashchuk
Yuri Fedkovych Chernivtsi National University
Email: i.orletskyi@chnu.edu.ua
Украина, Chernivtsi, 58012
V. Brus
Yuri Fedkovych Chernivtsi National University
Email: i.orletskyi@chnu.edu.ua
Украина, Chernivtsi, 58012
P. Marianchuk
Yuri Fedkovych Chernivtsi National University
Email: i.orletskyi@chnu.edu.ua
Украина, Chernivtsi, 58012
M. Solovan
Yuri Fedkovych Chernivtsi National University
Email: i.orletskyi@chnu.edu.ua
Украина, Chernivtsi, 58012
Z. Kovalyuk
Yuri Fedkovych Chernivtsi National University
Email: i.orletskyi@chnu.edu.ua
Украина, Chernivtsi, 58012
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