Email this article On the preparation and photoelectric properties of Tl1–xIn1–xSnxSe2 (x = 0.1–0.25) alloys
- Authors: Danylchuk S.P.1, Myronchuk G.L.1, Mozolyuk M.Y.1, Bozhko V.V.1
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Affiliations:
- Lesya Ukrainka Eastern European National University
- Issue: Vol 50, No 1 (2016)
- Pages: 38-42
- Section: Electronic Properties of Semiconductors
- URL: https://ogarev-online.ru/1063-7826/article/view/196680
- DOI: https://doi.org/10.1134/S1063782616010073
- ID: 196680
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Abstract
The technological conditions for growing single crystals of Tl1–xIn1–xSnxSe2 (x = 0.1–0.25) alloys are developed. The spectral distribution of the photoconductivity of the grown crystals at T = 300 K and thermally stimulated conductivity are studied. The effect of In3+cation substitution with Sn4+ in Tl1–xIn1–xSnxSe2 (x = 0.1–0.25) alloys on their photoelectric properties is shown.
About the authors
S. P. Danylchuk
Lesya Ukrainka Eastern European National University
Author for correspondence.
Email: S.danilchuk@gmail.com
Ukraine, prosp. Voli 13, Lutsk, 43025
G. L. Myronchuk
Lesya Ukrainka Eastern European National University
Email: S.danilchuk@gmail.com
Ukraine, prosp. Voli 13, Lutsk, 43025
M. Yu. Mozolyuk
Lesya Ukrainka Eastern European National University
Email: S.danilchuk@gmail.com
Ukraine, prosp. Voli 13, Lutsk, 43025
V. V. Bozhko
Lesya Ukrainka Eastern European National University
Email: S.danilchuk@gmail.com
Ukraine, prosp. Voli 13, Lutsk, 43025
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