Enviar artigo por via de e-mail Preparation and study of ferroelectric films of La0.7Sr0.3MnO3
- Autores: Luzanov V.A1, Belorusov D.A1, Chucheva G.V1
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Afiliações:
- Fryazino branch Kotelnikov Institute of Radioengineering and Electronics RAS
- Edição: Volume 70, Nº 12 (2025)
- Páginas: 1225–1228
- Seção: НАНОЭЛЕКТРОНИКА
- URL: https://ogarev-online.ru/0033-8494/article/view/374161
- DOI: https://doi.org/10.7868/S3034590125120108
- ID: 374161
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Resumo
This paper presents the results of fabricating ferroelectric La0.7Sr0.3MnO3 (LSMO) thin films on silicon substrates. Oriented LSMO films were obtained using magnetron sputtering followed by annealing. Capacitance-voltage (C–V) measurements of the Ni-LSMO-Si metal-insulator-semiconductor (MIS) structures revealed that thermal treatment at 800 °C induces ferroelectric properties in the LSMO films. This is evidenced by a C–V hysteresis loop with a width of 5 V and a more than two-fold increase in the capacitance switching ratio. The demonstrated method shows promise for the integration of ferroelectric LSMO into silicon technology.
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Sobre autores
V. Luzanov
Fryazino branch Kotelnikov Institute of Radioengineering and Electronics RAS
Email: valery@luzanov.ru
Fryazino, Russian Federation
D. Belorusov
Fryazino branch Kotelnikov Institute of Radioengineering and Electronics RASFryazino, Russian Federation
G. Chucheva
Fryazino branch Kotelnikov Institute of Radioengineering and Electronics RASFryazino, Russian Federation
Bibliografia
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- Annese E., Mori T.J.A., Schio P. et al. // J. Magn. Magn. Mater. 2020. V. 507. Article No. 166812.
- Гольдман Е.И., Ждан А.Г., Чучева Г.В. // ПТЭ. 1997. № 2. С. 110.
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