Мақаланы E-mail арқылы жіберу Preparation and study of ferroelectric films of La0.7Sr0.3MnO3
- Авторлар: Luzanov V.A1, Belorusov D.A1, Chucheva G.V1
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Мекемелер:
- Fryazino branch Kotelnikov Institute of Radioengineering and Electronics RAS
- Шығарылым: Том 70, № 12 (2025)
- Беттер: 1225–1228
- Бөлім: НАНОЭЛЕКТРОНИКА
- URL: https://ogarev-online.ru/0033-8494/article/view/374161
- DOI: https://doi.org/10.7868/S3034590125120108
- ID: 374161
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Аннотация
This paper presents the results of fabricating ferroelectric La0.7Sr0.3MnO3 (LSMO) thin films on silicon substrates. Oriented LSMO films were obtained using magnetron sputtering followed by annealing. Capacitance-voltage (C–V) measurements of the Ni-LSMO-Si metal-insulator-semiconductor (MIS) structures revealed that thermal treatment at 800 °C induces ferroelectric properties in the LSMO films. This is evidenced by a C–V hysteresis loop with a width of 5 V and a more than two-fold increase in the capacitance switching ratio. The demonstrated method shows promise for the integration of ferroelectric LSMO into silicon technology.
Негізгі сөздер
Авторлар туралы
V. Luzanov
Fryazino branch Kotelnikov Institute of Radioengineering and Electronics RAS
Email: valery@luzanov.ru
Fryazino, Russian Federation
D. Belorusov
Fryazino branch Kotelnikov Institute of Radioengineering and Electronics RASFryazino, Russian Federation
G. Chucheva
Fryazino branch Kotelnikov Institute of Radioengineering and Electronics RASFryazino, Russian Federation
Әдебиет тізімі
- Шайхулов Т.А., Станкевич К.Л., Лузанов В.А. и др. // Письма в ЖТФ. 2023. Т. 49. № 12. С. 18.
- Annese E., Mori T.J.A., Schio P. et al. // J. Magn. Magn. Mater. 2020. V. 507. Article No. 166812.
- Гольдман Е.И., Ждан А.Г., Чучева Г.В. // ПТЭ. 1997. № 2. С. 110.
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