Мақаланы E-mail арқылы жіберу A device for heating a substrate during molecular beam epitaxy
- Авторлар: Shengurov V.G.1,2, Denisov S.A.1,2, Svetlov S.P.1, Chalkov V.Y.1, Shengurov D.V.1,2
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Мекемелер:
- Lobachevskii State University
- Institute of Microstructure Physics
- Шығарылым: Том 59, № 2 (2016)
- Беттер: 317-320
- Бөлім: Laboratory Techniques
- URL: https://ogarev-online.ru/0020-4412/article/view/158999
- DOI: https://doi.org/10.1134/S0020441216020135
- ID: 158999
Дәйексөз келтіру
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Аннотация
A device for uniform heating of both optically opaque silicon and transparent sapphire large-area substrates (with a diameter of up to 100 mm) in vacuum to high temperatures of 1250–1450°C is described. Using the device, it is possible to carefully prepare silicon and sapphire substrates in situ for growing Si and SiGe epitaxial layers by molecular beam epitaxy method.
Авторлар туралы
V. Shengurov
Lobachevskii State University; Institute of Microstructure Physics
Хат алмасуға жауапты Автор.
Email: shengurov@phys.unn.ru
Ресей, pr. Gagarina 23, Nizhny Novgorod, 603950; ul. Akademicheskaya 7, Afonino, Kstovo raion, Nizhny Novgorod oblast, 607680
S. Denisov
Lobachevskii State University; Institute of Microstructure Physics
Email: shengurov@phys.unn.ru
Ресей, pr. Gagarina 23, Nizhny Novgorod, 603950; ul. Akademicheskaya 7, Afonino, Kstovo raion, Nizhny Novgorod oblast, 607680
S. Svetlov
Lobachevskii State University
Email: shengurov@phys.unn.ru
Ресей, pr. Gagarina 23, Nizhny Novgorod, 603950
V. Chalkov
Lobachevskii State University
Email: shengurov@phys.unn.ru
Ресей, pr. Gagarina 23, Nizhny Novgorod, 603950
D. Shengurov
Lobachevskii State University; Institute of Microstructure Physics
Email: shengurov@phys.unn.ru
Ресей, pr. Gagarina 23, Nizhny Novgorod, 603950; ul. Akademicheskaya 7, Afonino, Kstovo raion, Nizhny Novgorod oblast, 607680
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