电邮这篇文章 A device for heating a substrate during molecular beam epitaxy
- 作者: Shengurov V.G.1,2, Denisov S.A.1,2, Svetlov S.P.1, Chalkov V.Y.1, Shengurov D.V.1,2
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隶属关系:
- Lobachevskii State University
- Institute of Microstructure Physics
- 期: 卷 59, 编号 2 (2016)
- 页面: 317-320
- 栏目: Laboratory Techniques
- URL: https://ogarev-online.ru/0020-4412/article/view/158999
- DOI: https://doi.org/10.1134/S0020441216020135
- ID: 158999
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详细
A device for uniform heating of both optically opaque silicon and transparent sapphire large-area substrates (with a diameter of up to 100 mm) in vacuum to high temperatures of 1250–1450°C is described. Using the device, it is possible to carefully prepare silicon and sapphire substrates in situ for growing Si and SiGe epitaxial layers by molecular beam epitaxy method.
作者简介
V. Shengurov
Lobachevskii State University; Institute of Microstructure Physics
编辑信件的主要联系方式.
Email: shengurov@phys.unn.ru
俄罗斯联邦, pr. Gagarina 23, Nizhny Novgorod, 603950; ul. Akademicheskaya 7, Afonino, Kstovo raion, Nizhny Novgorod oblast, 607680
S. Denisov
Lobachevskii State University; Institute of Microstructure Physics
Email: shengurov@phys.unn.ru
俄罗斯联邦, pr. Gagarina 23, Nizhny Novgorod, 603950; ul. Akademicheskaya 7, Afonino, Kstovo raion, Nizhny Novgorod oblast, 607680
S. Svetlov
Lobachevskii State University
Email: shengurov@phys.unn.ru
俄罗斯联邦, pr. Gagarina 23, Nizhny Novgorod, 603950
V. Chalkov
Lobachevskii State University
Email: shengurov@phys.unn.ru
俄罗斯联邦, pr. Gagarina 23, Nizhny Novgorod, 603950
D. Shengurov
Lobachevskii State University; Institute of Microstructure Physics
Email: shengurov@phys.unn.ru
俄罗斯联邦, pr. Gagarina 23, Nizhny Novgorod, 603950; ul. Akademicheskaya 7, Afonino, Kstovo raion, Nizhny Novgorod oblast, 607680
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