Electrical Resistivity of Silicated Silicon Carbide

Авторлар: Kostanovskiy A.V.¹, Zeodinov M.G.¹, Kostanovskaya M.E.¹, Pronkin A.A.¹
Мекемелер:
1. Joint Institute for High Temperatures, Russian Academy of Sciences
Шығарылым: Том 56, № 5 (2018)
Беттер: 824-826
Бөлім: Short Communications
URL: https://ogarev-online.ru/0018-151X/article/view/157832
DOI: https://doi.org/10.1134/S0018151X18050152
ID: 157832

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Тек жазылушылар үшін

We present the results of an experiment on the electrical resistivity of silicated silicon carbide within a temperature range of 1200–2200 K.

Electrical Resistivity, Free Silicon Content, Internal Cylinder Surface, Hollow Cylinder Specimens, Tungsten Wire Loop

Joint Institute for High Temperatures, Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: Kostanovskiy@gmail.com
Ресей, Moscow, 125412

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: Kostanovskiy@gmail.com
Ресей, Moscow, 125412

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: Kostanovskiy@gmail.com
Ресей, Moscow, 125412

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: Kostanovskiy@gmail.com
Ресей, Moscow, 125412

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