Electrical Resistivity of Silicated Silicon Carbide

Autores: Kostanovskiy A.V.¹, Zeodinov M.G.¹, Kostanovskaya M.E.¹, Pronkin A.A.¹
Afiliações:
1. Joint Institute for High Temperatures, Russian Academy of Sciences
Edição: Volume 56, Nº 5 (2018)
Páginas: 824-826
Seção: Short Communications
URL: https://ogarev-online.ru/0018-151X/article/view/157832
DOI: https://doi.org/10.1134/S0018151X18050152
ID: 157832

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Somente assinantes

We present the results of an experiment on the electrical resistivity of silicated silicon carbide within a temperature range of 1200–2200 K.

Electrical Resistivity, Free Silicon Content, Internal Cylinder Surface, Hollow Cylinder Specimens, Tungsten Wire Loop

Joint Institute for High Temperatures, Russian Academy of Sciences

Autor responsável pela correspondência
Email: Kostanovskiy@gmail.com
Rússia, Moscow, 125412

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: Kostanovskiy@gmail.com
Rússia, Moscow, 125412

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: Kostanovskiy@gmail.com
Rússia, Moscow, 125412

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: Kostanovskiy@gmail.com
Rússia, Moscow, 125412

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