Electrical Resistivity of Silicated Silicon Carbide


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We present the results of an experiment on the electrical resistivity of silicated silicon carbide within a temperature range of 1200–2200 K.

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A. Kostanovskiy

Joint Institute for High Temperatures, Russian Academy of Sciences

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Email: Kostanovskiy@gmail.com
俄罗斯联邦, Moscow, 125412

M. Zeodinov

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: Kostanovskiy@gmail.com
俄罗斯联邦, Moscow, 125412

M. Kostanovskaya

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: Kostanovskiy@gmail.com
俄罗斯联邦, Moscow, 125412

A. Pronkin

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: Kostanovskiy@gmail.com
俄罗斯联邦, Moscow, 125412

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