The influence of the substrate temperature change character during the growth on the topology of the Ge/Si(100) film surface

L S Lunin; Лунин Л С; M D Bavizhev; Бавижев М Д; I A Sysoev; Сысоев И А; V A Lapin; Лапин В А; D S Kuleshov; Кулешов Д С; F F Malyavin; Малявин Ф Ф

The influence of the substrate temperature change character during the growth on the topology of the Ge/Si(100) film surface

Авторлар: Lunin LS¹, Bavizhev MD¹, Sysoev IA¹, Lapin VA¹, Kuleshov DS¹, Malyavin FF¹
Мекемелер:
1. Southern Scientific Center
Шығарылым: № 3 (2012)
Беттер: 98-103
Бөлім: Articles
URL: https://ogarev-online.ru/2312-8143/article/view/335685
ID: 335685

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Аннотация

The possibility of roughness reducing of the Ge/Si (100) film using low-temperature layer of Ge (LT-Ge) has been investigated. It was shown that the substrate temperature change character during the growth process influences on the surface morphology of the grown Ge/LT-Ge/Si films. Samples were obtained by the method of molecular-beam epitaxy.