Том 3, № 20 (2015)
- Жылы: 2015
- ##issue.datePublished##: 21.12.2015
- Мақалалар: 10
- URL: https://ogarev-online.ru/2311-2468/issue/view/18984
Бүкіл шығарылым
Dependences of on-state propagation velocity on thyristor geometric parameters
Аннотация
The article considers the study results of on-state linear propagation velocity dependences on current density in open thyristors by varying the values of their geometric parameters. The study was carried out on the basis of modelling of thyristor turn-on in Synopsys TCAD software environment. The approximation dependences of on-state propagation velocity on thyristor geometric parameters are presented.
Relationship coefficients for complete calibration of typical neutron radiation unit
Аннотация
This article considers the relationship coefficients sufficient for testing only one of the values of neutron radiation. Using the appropriate coefficients in reference neutron fields by the results of indirect measurements, one can determine the values of the absorbed neutron dose and the equivalent neutron dose and thereby provide calibration based on dosimetric quantities. This eliminates the need to use standard mobile dosimetry measuring instruments for direct measurements of the absorbed and equivalent neutron dose rates.
Limiting switching overvoltage on power semiconductor devices
Аннотация
This article discusses the current approaches to the problem of limiting switching overvoltage on power semiconductor devices. The author studies the mathematical relations that describe transient processes when turning off power semiconductor devices considering the set of parameter values of snubber circuits. Conclusions are made on the advantages and disadvantages of the methods. Some ways of their improvement are suggested.
User authentication based on keystroke dynamics
Аннотация
Due to the rapid development of network technology and universal introduction of multi-user computer systems, the problem of user authentication has become particularly relevant. This article considers the user authentication methods with a focus on analyzing the keystroke dynamics.
Ensuring equal distribution of reverse voltage on series-connected power semiconductor devices
Аннотация
The article presents the mathematical relationships describing the processes that occur in valve shoulder devices when turned off. The approaches to defining snubber circuit parameters are considered. Conclusions are made on the shortcomings of the existing techniques. Some ways of their improvement are suggested.