Main Aspects of Metallization Formation in Sub-10 nm Integrated Circuit Manufacturing Technology

Capa

Citar

Texto integral

Resumo

The main results of theoretical and experimental studies of Ar/Cl2 and Ar/Cl2/O2 plasma parameters in an atomic layer etching reactor, studies of etching of Mo, W, Ru films in chlorine-containing plasma with in-situ control of the continuous etching process and cyclic atomic layer etching of the W film in fluorinated plasma are presented. The results of the ion concentration calculation obtained using the developed two-dimensional hydrodynamic plasma model of chlorine-containing plasma in the Ar discharge are in good agreement with experimental data. A strong increase in the etching rate of Mo, W in chlorine-containing plasma with an increase in ion energy was found. It is shown that the use of an in-situ reflectometric method for determining the etching rate makes it possible to control the etching process at individual stages of cyclic atomic layer etching of metals. This contributes to its faster development. The mechanism of etching of metals in chlorine-containing plasma is briefly discussed.

Sobre autores

Ildar Amirov

Yaroslavl Branch of Valiev Institute of Physics and Technology, RAS

Autor responsável pela correspondência
Email: ildamirov@yandex.ru
Rússia, 21 Universitetskaya Str., Yaroslavl, 150007, Russia

Aleksander Kupriyanov

Yaroslavl Branch of Valiev Institute of Physics and Technology, RAS

Email: shurik7777@mail.ru
Rússia, 21 Universitetskaya Str., Yaroslavl, 150007, Russia

Viktor Naumov

Yaroslavl Branch of Valiev Institute of Physics and Technology, RAS

Email: vvnau@rambler.ru
Rússia, 21 Universitetskaya Str., Yaroslavl, 150007, Russia

Mikhail Izyumov

Yaroslavl Branch of Valiev Institute of Physics and Technology, RAS

Email: mikhail-izyumov@yandex.ru
Rússia, 21 Universitetskaya Str., Yaroslavl, 150007, Russia

Dmitry Voloshin

Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University

Email: dvoloshin@mics.msu.ru
Rússia, 1-2 Leninskie Gory, GSP-1, Moscow, 119991, Russia

Andrey Kropotkin

Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University

Email: kropotkin.an14@physics.msu.ru
Rússia, 1-2 Leninskie Gory, GSP-1, Moscow, 119991, Russia

Dmitry Lopaev

Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University

Email: d.lopaev@gmail.com
Rússia, 1-2 Leninskie Gory, GSP-1, Moscow, 119991, Russia

Tatyana Rakhimova

Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University

Email: trakhimova@mics.msu.ru
Rússia, 1-2 Leninskie Gory, GSP-1, Moscow, 119991, Russia

Bibliografia

  1. A.A Vyas., C. Zhou, C.Y. Yang IEEE T. Nanotechnol., 2018, 17(1), 4. doi: 10.1109/TNANO.2016.2635583.
  2. D. Gall J. Appl. Phys., 2016, 119(8), 085101. doi: 10.1063/1.4942216.
  3. A. Pacco, Y. Akanishi, Q.T. Le, E. Kesters, G. Murdoch, F. Holsteyns Microelectron. Eng., 2019, 217, 111131. doi: 10.1016/j.mee.2019.111131.
  4. K. Barmak, S. Ezzat, R. Gusley, A. Jog, S. Kerdsongpanya, A. Khaniya, E. Milosevic, W. Richardson, K. Sentosun, A. Zangiabadi, D. Gall, W.E. Kaden, E.R. Mucciolo, P.K. Schelling, A.C. West, K.R. Coffey J. Vac. Sci. Technol. A, 2020, 38(3), 033406. doi: 10.1116/6.0000018.
  5. S.S. Ezzat, P.D. Mani, A. Khaniya, W. Kaden, D. Gall, K. Barmak, K.R. Coffey J. Vac. Sci. Technol. A, 2019, 37(3), 031516-1. doi: 10.1116/1.5093494.
  6. S. Paolillo, D. Wan, F. Lazzarino, N. Rassoul, D. Piumi, Z. Tokei J. Vac. Sci. Technol. B, 2018, 36(3), 03E103. doi: 10.1116/1.5022283.
  7. L. Chen, S. Kumar, M. Yahagi, D. Ando, Y. Sutou, D. Gall, R. Sundararaman, J. Koike J. Appl. Phys., 2021, 129(3), 035301. doi: 10.1063/5.0026837.
  8. L. Jablonka, L. Riekehr, Z. Zhang, S.-L. Zhang, T. Kubart Appl. Phys. Lett., 2018, 112(4), 043103. doi: 10.1063/1.5011109.
  9. I.I. Amirov, R.V. Selyukov, V.V. Naumov, E.S. Gorlachev Russ. Microelectron., 2021, 50(1), 1. doi: 10.1134/S1063739721010030.
  10. K.J. Kanarik, T. Lill, E.A. Hudson, S. Sriraman, S.S.H. Tan, J. Marks, V. Vahedi, R.A. Gottscho J. Vac. Sci. Technol. A, 2015, 33(2), 020802. doi: 10.1116/1.4913379.
  11. K.J. Kanarik, S. Tan, W. Yang, T. Kim, T. Lill, A. Kabansky, E.A. Hudson, T. Ohba, K. Nojiri, J. Yu, R. Wise, I.L. Berry, Y. Pan, J. Marks, R. A. Gottscho J. Vac. Sci. Technol. A, 2017, 35(5), 05C302-301. doi: 10.1116/1.4979019.
  12. Y. Lee, Y. Kim, J. Son, H. Chae J. Vac. Sci. Technol. A, 2022, 40(2), 022602. doi: 10.1116/6.0001603.
  13. A.N. Kropotkin, D.G. Voloshin Plasma Phys. Rep., 2019, 45, 786. doi: 10.1134/S1063780X19070055.
  14. C. Corr, E. Despiau-Pujo, P. Chaber, W.G. Graham, F.G. Marro, D.B. Graves J. Phys. D: Appl. Phys., 2008, 41(18), 185202. doi: 10.1088/0022-3727/41/18/185202.
  15. C. Hsu, M.A. Nierode, J.W. Coburn, D.B. Graves J. Phys. D: Appl. Phys, 2006, 39, 3272. doi: 10.1088/0022-3727/39/15/009.
  16. M. Bogdanova, D. Lopaev, T. Rakhimova, D. Voloshin, A. Zotovich, S. Zyryanov Plasma Sources Sci. Technol., 2021, 30(7), 075020. doi: 10.1088/1361-6595/abf71b.
  17. D. Voloshin, T. Rakhimova, A. Kropotkin, I. Amirov, M. Izyumov, D. Lopaev, A. Zotovich, S. Ziryanov Plasma Sources Sci. Technol., 2023, 32(4), 044001. doi: 10.1088/1361-6595/acc355.
  18. I.I. Amirov, M.O. Izyumov, V.V. Naumov, E.S. Gorlachev J. Phys. D: Appl. Phys., 2021, 54(6), 065204. doi: 10.1088/1361-6463/abc3ed.
  19. C.C. Hsu, J.W. Coburn, D.B. Graves J. Vac. Sci. Technol. A, 2006, 24, 1. doi: 10.1116/1.2121751.
  20. S. Decoster, E. Camerotto, G. Murdoch, S. Kundu, Q.T. Le, Z. Tőkei, G. Jurczak, F. Lazzarino J. Vac. Sci. Technol. B, 2022, 40(3), 032802. doi: 10.1116/6.0001791.

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML
Baixar

Declaração de direitos autorais © Amirov I.I., Kupriyanov A.N., Naumov V.V., Izyumov M.O., Voloshin D.G., Kropotkin A.N., Lopaev D.V., Rakhimova T.V., 2023

Согласие на обработку персональных данных

 

Используя сайт https://journals.rcsi.science, я (далее – «Пользователь» или «Субъект персональных данных») даю согласие на обработку персональных данных на этом сайте (текст Согласия) и на обработку персональных данных с помощью сервиса «Яндекс.Метрика» (текст Согласия).