Resonance Raman Scattering Spectroscopy of Four-Monolayer Thick MoS2 Films


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

We studied the Raman scattering in bulk and four-monolayer thick MoS2 films under the resonance laser excitation of A, B, and C excitons. We demonstrate the fine structure agility of a phonon mode associated with out-of-plane vibration of sulfur atoms (A1g) when passing from bulk to atomically thin film. The C exciton resonance excitation allows us to register the line corresponding to optical-phonon (E1g) scattering and the set of peaks with a 660 – 740 cm1 Stokes shift associated with resonance scattering by two optical (Eu) phonons.

Sobre autores

V. Bagaev

Lebedev Physical Institute, Russian Academy of Sciences

Email: nikolaev-s@yandex.ru
Rússia, Leninskii Prospect 53, Moscow, 119991

V. Krivobok

Lebedev Physical Institute, Russian Academy of Sciences

Email: nikolaev-s@yandex.ru
Rússia, Leninskii Prospect 53, Moscow, 119991

S. Nikolaev

Lebedev Physical Institute, Russian Academy of Sciences

Autor responsável pela correspondência
Email: nikolaev-s@yandex.ru
Rússia, Leninskii Prospect 53, Moscow, 119991

M. Chernopitssky

Lebedev Physical Institute, Russian Academy of Sciences

Email: nikolaev-s@yandex.ru
Rússia, Leninskii Prospect 53, Moscow, 119991

K. Savin

Lebedev Physical Institute, Russian Academy of Sciences

Email: nikolaev-s@yandex.ru
Rússia, Leninskii Prospect 53, Moscow, 119991

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Springer Science+Business Media, LLC, part of Springer Nature, 2019