Resonance Raman Scattering Spectroscopy of Four-Monolayer Thick MoS2 Films
- Autores: Bagaev V.S.1, Krivobok V.S.1, Nikolaev S.N.1, Chernopitssky M.A.1, Savin K.A.1
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Afiliações:
- Lebedev Physical Institute, Russian Academy of Sciences
- Edição: Volume 40, Nº 3 (2019)
- Páginas: 269-273
- Seção: Article
- URL: https://ogarev-online.ru/1071-2836/article/view/248760
- DOI: https://doi.org/10.1007/s10946-019-09801-8
- ID: 248760
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Resumo
We studied the Raman scattering in bulk and four-monolayer thick MoS2 films under the resonance laser excitation of A, B, and C excitons. We demonstrate the fine structure agility of a phonon mode associated with out-of-plane vibration of sulfur atoms (A1g) when passing from bulk to atomically thin film. The C exciton resonance excitation allows us to register the line corresponding to optical-phonon (E1g) scattering and the set of peaks with a 660 – 740 cm−1 Stokes shift associated with resonance scattering by two optical (Eu) phonons.
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Sobre autores
V. Bagaev
Lebedev Physical Institute, Russian Academy of Sciences
Email: nikolaev-s@yandex.ru
Rússia, Leninskii Prospect 53, Moscow, 119991
V. Krivobok
Lebedev Physical Institute, Russian Academy of Sciences
Email: nikolaev-s@yandex.ru
Rússia, Leninskii Prospect 53, Moscow, 119991
S. Nikolaev
Lebedev Physical Institute, Russian Academy of Sciences
Autor responsável pela correspondência
Email: nikolaev-s@yandex.ru
Rússia, Leninskii Prospect 53, Moscow, 119991
M. Chernopitssky
Lebedev Physical Institute, Russian Academy of Sciences
Email: nikolaev-s@yandex.ru
Rússia, Leninskii Prospect 53, Moscow, 119991
K. Savin
Lebedev Physical Institute, Russian Academy of Sciences
Email: nikolaev-s@yandex.ru
Rússia, Leninskii Prospect 53, Moscow, 119991
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