Resonance Raman Scattering Spectroscopy of Four-Monolayer Thick MoS2 Films


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

We studied the Raman scattering in bulk and four-monolayer thick MoS2 films under the resonance laser excitation of A, B, and C excitons. We demonstrate the fine structure agility of a phonon mode associated with out-of-plane vibration of sulfur atoms (A1g) when passing from bulk to atomically thin film. The C exciton resonance excitation allows us to register the line corresponding to optical-phonon (E1g) scattering and the set of peaks with a 660 – 740 cm1 Stokes shift associated with resonance scattering by two optical (Eu) phonons.

作者简介

V. Bagaev

Lebedev Physical Institute, Russian Academy of Sciences

Email: nikolaev-s@yandex.ru
俄罗斯联邦, Leninskii Prospect 53, Moscow, 119991

V. Krivobok

Lebedev Physical Institute, Russian Academy of Sciences

Email: nikolaev-s@yandex.ru
俄罗斯联邦, Leninskii Prospect 53, Moscow, 119991

S. Nikolaev

Lebedev Physical Institute, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: nikolaev-s@yandex.ru
俄罗斯联邦, Leninskii Prospect 53, Moscow, 119991

M. Chernopitssky

Lebedev Physical Institute, Russian Academy of Sciences

Email: nikolaev-s@yandex.ru
俄罗斯联邦, Leninskii Prospect 53, Moscow, 119991

K. Savin

Lebedev Physical Institute, Russian Academy of Sciences

Email: nikolaev-s@yandex.ru
俄罗斯联邦, Leninskii Prospect 53, Moscow, 119991

补充文件

附件文件
动作
1. JATS XML

版权所有 © Springer Science+Business Media, LLC, part of Springer Nature, 2019