Deposition of  63 Ni onto a Semiconductor Structure of Power Cells

I. D. Kharitonov; A. O. Merkushkin; G. V. Veretennikova; E. P. Magomedbekov; S. N. Kalmykov

doi:10.1134/S1066362218010046

Deposition of ⁶³Ni onto a Semiconductor Structure of Power Cells

Authors: Kharitonov I.D.¹, Merkushkin A.O.², Veretennikova G.V.², Magomedbekov E.P.², Kalmykov S.N.¹
Affiliations:
1. Radiochemistry Chair, Chemical Faculty
2. Institute of Materials for Modern Power Engineering and Nanotechnology
Issue: Vol 60, No 1 (2018)
Pages: 23-25
Section: Article
URL: https://ogarev-online.ru/1066-3622/article/view/224321
DOI: https://doi.org/10.1134/S1066362218010046
ID: 224321

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Supplementary files
Statistics

Abstract

A procedure was developed for electrochemical deposition of ⁶³Ni onto the surface of a siliconbased semiconductor converter. A special electrochemical cell allowing the electrolysis to be performed in an inert atmosphere was developed. The principal possibility of preparing Ni metal films of preset thickness on the surface of a semiconductor converter was demonstrated.