Deposition of 63Ni onto a Semiconductor Structure of Power Cells
- Авторлар: Kharitonov I.D.1, Merkushkin A.O.2, Veretennikova G.V.2, Magomedbekov E.P.2, Kalmykov S.N.1
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Мекемелер:
- Radiochemistry Chair, Chemical Faculty
- Institute of Materials for Modern Power Engineering and Nanotechnology
- Шығарылым: Том 60, № 1 (2018)
- Беттер: 23-25
- Бөлім: Article
- URL: https://ogarev-online.ru/1066-3622/article/view/224321
- DOI: https://doi.org/10.1134/S1066362218010046
- ID: 224321
Дәйексөз келтіру
Аннотация
A procedure was developed for electrochemical deposition of 63Ni onto the surface of a siliconbased semiconductor converter. A special electrochemical cell allowing the electrolysis to be performed in an inert atmosphere was developed. The principal possibility of preparing Ni metal films of preset thickness on the surface of a semiconductor converter was demonstrated.
Негізгі сөздер
Авторлар туралы
I. Kharitonov
Radiochemistry Chair, Chemical Faculty
Email: ver-gv@yandex.ru
Ресей, Moscow
A. Merkushkin
Institute of Materials for Modern Power Engineering and Nanotechnology
Email: ver-gv@yandex.ru
Ресей, ul. Geroev Panfilovtsev 20, Moscow, 125480
G. Veretennikova
Institute of Materials for Modern Power Engineering and Nanotechnology
Хат алмасуға жауапты Автор.
Email: ver-gv@yandex.ru
Ресей, ul. Geroev Panfilovtsev 20, Moscow, 125480
E. Magomedbekov
Institute of Materials for Modern Power Engineering and Nanotechnology
Email: ver-gv@yandex.ru
Ресей, ul. Geroev Panfilovtsev 20, Moscow, 125480
S. Kalmykov
Radiochemistry Chair, Chemical Faculty
Email: ver-gv@yandex.ru
Ресей, Moscow
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