Apokampic Discharge: Formation Conditions and Mechanisms
- 作者: Sosnin E.A.1,2, Panarin V.A.1, Skakun V.S.1, Tarasenko V.F.1,2, Kozyrev A.V.1, Kozhevnikov V.Y.1,2, Sitnikov A.G.1, Kokovin A.O.1, Kuznetsov V.S.1
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隶属关系:
- Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
- National Research Tomsk State University
- 期: 卷 62, 编号 7 (2019)
- 页面: 1289-1297
- 栏目: Article
- URL: https://ogarev-online.ru/1064-8887/article/view/242166
- DOI: https://doi.org/10.1007/s11182-019-01846-1
- ID: 242166
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详细
The experimental and theoretical investigations of a new form of burning of a repetitively-pulsed discharge – apokamp – are performed. It is shown that an apokampic discharge represents a narrow streamer channel, growing from the point of plasma channel bending, having a characteristic propagation velocity of tens and hundreds of meters per second, depending on the applied voltage and gas pressure and type. The conditions necessary for an apokamp to evolve are formed in a comparatively weak macroscopic electric field. The channel bend ensures a local field enhancement, which prescribes the starting orientation of the growing streamer channel. The pulse-frequency power supply regime of the discharge reproduces the streamer channel in every pulse, but the preceding framework of the ion-ion plasma ensures reproduction of the channel shape from pulse to pulse.
作者简介
E. Sosnin
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Email: panarin@yandex.ru
俄罗斯联邦, Tomsk; Tomsk
V. Panarin
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
编辑信件的主要联系方式.
Email: panarin@yandex.ru
俄罗斯联邦, Tomsk
V. Skakun
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: panarin@yandex.ru
俄罗斯联邦, Tomsk
V. Tarasenko
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Email: panarin@yandex.ru
俄罗斯联邦, Tomsk; Tomsk
A. Kozyrev
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: panarin@yandex.ru
俄罗斯联邦, Tomsk
V. Kozhevnikov
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Email: panarin@yandex.ru
俄罗斯联邦, Tomsk; Tomsk
A. Sitnikov
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: panarin@yandex.ru
俄罗斯联邦, Tomsk
A. Kokovin
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: panarin@yandex.ru
俄罗斯联邦, Tomsk
V. Kuznetsov
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: panarin@yandex.ru
俄罗斯联邦, Tomsk
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