Apokampic Discharge: Formation Conditions and Mechanisms
- Authors: Sosnin E.A.1,2, Panarin V.A.1, Skakun V.S.1, Tarasenko V.F.1,2, Kozyrev A.V.1, Kozhevnikov V.Y.1,2, Sitnikov A.G.1, Kokovin A.O.1, Kuznetsov V.S.1
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Affiliations:
- Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
- National Research Tomsk State University
- Issue: Vol 62, No 7 (2019)
- Pages: 1289-1297
- Section: Article
- URL: https://ogarev-online.ru/1064-8887/article/view/242166
- DOI: https://doi.org/10.1007/s11182-019-01846-1
- ID: 242166
Cite item
Abstract
The experimental and theoretical investigations of a new form of burning of a repetitively-pulsed discharge – apokamp – are performed. It is shown that an apokampic discharge represents a narrow streamer channel, growing from the point of plasma channel bending, having a characteristic propagation velocity of tens and hundreds of meters per second, depending on the applied voltage and gas pressure and type. The conditions necessary for an apokamp to evolve are formed in a comparatively weak macroscopic electric field. The channel bend ensures a local field enhancement, which prescribes the starting orientation of the growing streamer channel. The pulse-frequency power supply regime of the discharge reproduces the streamer channel in every pulse, but the preceding framework of the ion-ion plasma ensures reproduction of the channel shape from pulse to pulse.
About the authors
E. A. Sosnin
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Email: panarin@yandex.ru
Russian Federation, Tomsk; Tomsk
V. A. Panarin
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Author for correspondence.
Email: panarin@yandex.ru
Russian Federation, Tomsk
V. S. Skakun
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: panarin@yandex.ru
Russian Federation, Tomsk
V. F. Tarasenko
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Email: panarin@yandex.ru
Russian Federation, Tomsk; Tomsk
A. V. Kozyrev
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: panarin@yandex.ru
Russian Federation, Tomsk
V. Yu. Kozhevnikov
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Email: panarin@yandex.ru
Russian Federation, Tomsk; Tomsk
A. G. Sitnikov
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: panarin@yandex.ru
Russian Federation, Tomsk
A. O. Kokovin
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: panarin@yandex.ru
Russian Federation, Tomsk
V. S. Kuznetsov
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: panarin@yandex.ru
Russian Federation, Tomsk
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