| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 58, № 11 (2016) |
Physics of Semiconductors and Dielectrics |
Gallium Nitride: Charge Neutrality Level and Interfaces |
|
| Том 59, № 7 (2016) |
Article |
Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping |
|
| Том 59, № 12 (2017) |
Article |
BN, AlN, GaN, InN: Charge Neutrality Level, Surface, Interfaces, Doping |
|
| Том 61, № 1 (2018) |
Article |
Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN |
|
| Том 61, № 6 (2018) |
Article |
Physical Properties of Solid Solutions InxAl1–xN |
|
| Том 61, № 8 (2018) |
Article |
Electrophysical and Physical-Chemical Properties of Ohmic Contacts to III-N Compounds |
|
