Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN


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Abstract

The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p-GaN layer. The values of the diffusion coefficient estimated for true growth temperatures of 860, 910, and 980°C were 7.5·10–17, 2.8·10–16, and 1.2·10–15 cm2/s, respectively. The temperature values given in the work were measured on the surface of the growing layer in situ using a pyrometer. The calculated activation energy for the temperature dependence of the diffusion coefficient was 2.8 eV.

About the authors

I. S. Romanov

National Research Tomsk State University

Author for correspondence.
Email: rff.romis@gmail.com
Russian Federation, Tomsk

I. A. Prudaev

National Research Tomsk State University

Email: rff.romis@gmail.com
Russian Federation, Tomsk

V. N. Brudnyi

National Research Tomsk State University

Email: rff.romis@gmail.com
Russian Federation, Tomsk

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