Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN
- Authors: Romanov I.S.1, Prudaev I.A.1, Brudnyi V.N.1
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Affiliations:
- National Research Tomsk State University
- Issue: Vol 61, No 1 (2018)
- Pages: 187-190
- Section: Article
- URL: https://ogarev-online.ru/1064-8887/article/view/240104
- DOI: https://doi.org/10.1007/s11182-018-1383-9
- ID: 240104
Cite item
Abstract
The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p-GaN layer. The values of the diffusion coefficient estimated for true growth temperatures of 860, 910, and 980°C were 7.5·10–17, 2.8·10–16, and 1.2·10–15 cm2/s, respectively. The temperature values given in the work were measured on the surface of the growing layer in situ using a pyrometer. The calculated activation energy for the temperature dependence of the diffusion coefficient was 2.8 eV.
About the authors
I. S. Romanov
National Research Tomsk State University
Author for correspondence.
Email: rff.romis@gmail.com
Russian Federation, Tomsk
I. A. Prudaev
National Research Tomsk State University
Email: rff.romis@gmail.com
Russian Federation, Tomsk
V. N. Brudnyi
National Research Tomsk State University
Email: rff.romis@gmail.com
Russian Federation, Tomsk
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