| Issue |
Title |
File |
| Vol 60, No 2 (2017) |
Growth of Epitaxial SiSn Films with High Sn Content for IR Converters |
(Eng)
|
|
Timofeev V.A., Nikiforov A.I., Kokhanenko A.P., Tuktamyshev A.R., Mashanov V.I., Loshkarev I.D., Novikov V.A.
|
| Vol 60, No 1 (2017) |
Dependences of Characteristics of Sensors Based on Tin Dioxide on the Hydrogen Concentration and Humidity of Gas Mixture |
(Eng)
|
|
Gaman V.I., Almaev A.V.
|
| Vol 59, No 12 (2017) |
On Dipole Moment of Impurity Carbon Nanotubes |
(Eng)
|
|
Konobeeva N.N., Ten A.V., Belonenko M.B.
|
| Vol 59, No 10 (2017) |
Stability of Quasi-Two-Dimensional Electron-Hole Liquid in Semiconductor Structures of the Type-II |
(Eng)
|
|
Vasilchenko A.A., Kopytov G.F., Krivobok V.S., Ermokhin D.A.
|
| Vol 59, No 9 (2017) |
Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices |
(Eng)
|
|
Lazarenko P.I., Kozyukhin S.A., Sherchenkov A.A., Babich A.V., Timoshenkov S.P., Gromov D.G., Zabolotskaya A.V., Kozik V.V.
|
| Vol 59, No 8 (2016) |
A Solid-State Sub-Nanosecond Microwave Switch |
(Eng)
|
|
Avdochenko B.I., Prudaev I.A., Tolbanov O.P., Chumerin P.Y., Yurchenko V.I.
|
| Vol 59, No 7 (2016) |
Temperature and Field Dependences of Parameters of the Equivalent Circuit Elements of MIS Structures Based on MBE n-Hg0.775Cd0.225Te in the Strong Inversion Mode |
(Eng)
|
|
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M.
|
| Vol 59, No 6 (2016) |
Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide |
(Eng)
|
|
Kalygina V.M., Petrova Y.S., Prudaev I.A., Tolbanov O.P.
|
| Vol 59, No 5 (2016) |
Peculiarities of Crystal Structure of the Cubic System Compounds with T4 and T5 Space Groups |
(Eng)
|
|
Zolotarev M.L., Poplavnoi A.S.
|
| Vol 59, No 3 (2016) |
Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy |
(Eng)
|
|
Świątek Z., Ozga P., Izhnin I.I., Fitsych E.I., Voitsekhovskii A.V., Korotaev A.G., Mynbaev K.D., Varavin V.S., Dvoretsky S.A., Mikhailov N.N., Yakushev M.V., Bonchyk A.Y., Savytsky H.V.
|
| Vol 59, No 2 (2016) |
Method of a Generalized Physical Property in the Crystal Physics Problems |
(Eng)
|
|
Davydov V.N., Lugina N.É.
|
| Vol 59, No 1 (2016) |
Separation of Contributions from the Ion Core and Free Charge Carriers to the Magnetic Susceptibility of an Anisotropic Semiconductor Bi2Te3–Sb2Te3 Crystal |
(Eng)
|
|
Stepanov N.P., Nalivkin V.Y.
|
| Vol 58, No 12 (2016) |
Photoconductivity in Magnetic Field of р-Type Cadmium – Mercury – Tellurium Films Grown by Liquid Phase Epitaxy |
(Eng)
|
|
Kostyuchenko V.Y., Protasov D.Y., Andrusov Y.B., Denisov I.A., Voitsekhovskii A.V.
|
| Vol 58, No 11 (2016) |
Gallium Nitride: Charge Neutrality Level and Interfaces |
(Eng)
|
|
Brudnyi V.N.
|
| Vol 58, No 9 (2016) |
To a Method of Polarization-Depolarization Currents for Diagnosis of Dielectric Isolation |
(Eng)
|
|
Ambrozevich S.A., Sibatov R.T., Uchaikin D.V., Morozova E.V.
|
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