Email this article Stability of Quasi-Two-Dimensional Electron-Hole Liquid in Semiconductor Structures of the Type-II
- Authors: Vasilchenko A.A.1, Kopytov G.F.2, Krivobok V.S.3,4, Ermokhin D.A.1
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Affiliations:
- Kuban State Technological University
- Kuban State University
- Lebedev Physical Institute of the Russian Academy of Sciences
- National Research Nuclear University “MEPhI”
- Issue: Vol 59, No 10 (2017)
- Pages: 1693-1698
- Section: Physics of Semiconductors and Dielectrics
- URL: https://ogarev-online.ru/1064-8887/article/view/238984
- DOI: https://doi.org/10.1007/s11182-017-0962-5
- ID: 238984
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Abstract
Analytical expressions are obtained for the energy of a quasi-two-dimensional electron-hole liquid (EHL) and the threshold value of the barrier height for electrons, above which formation of the direct EHL is impossible. It is shown that the state with a quasi-two-dimensional EHL can be energetically favorable in semiconductors with the anisotropy of masses and (or) a large number of equivalent valleys. A comparison of the calculation results with the experimental data for the Si/SiGe/Si structure is made.
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About the authors
A. A. Vasilchenko
Kuban State Technological University
Author for correspondence.
Email: a_vas2002@mail.ru
Russian Federation, Krasnodar
G. F. Kopytov
Kuban State University
Email: a_vas2002@mail.ru
Russian Federation, Krasnodar
V. S. Krivobok
Lebedev Physical Institute of the Russian Academy of Sciences; National Research Nuclear University “MEPhI”
Email: a_vas2002@mail.ru
Russian Federation, Moscow; Moscow
D. A. Ermokhin
Kuban State Technological University
Email: a_vas2002@mail.ru
Russian Federation, Krasnodar
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