Email this article Microstructuring of the Surface of High-Resistivity Single-Crystalline Silicon by Chemical Etching
- Authors: Kashuba A.S.1, Permikina E.V.1, Golovin S.V.1, Lakmanova M.R.1, Pogozheva A.V.1
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Affiliations:
- AO NPO Orion
- Issue: Vol 64, No 9 (2019)
- Pages: 1030-1033
- Section: Article
- URL: https://ogarev-online.ru/1064-2269/article/view/201251
- DOI: https://doi.org/10.1134/S1064226919090109
- ID: 201251
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Abstract
The influence of various etching processes on the single-crystalline (100) silicon surface is studied. It is demonstrated that microstructuring of the surface of high-resistivity single-crystalline silicon in alkaline solutions is better performed using electrolytic methods at temperatures no lower than 80°C. Etch patterns with better-defined side faces are formed by anisotropic etching with the addition of hydrogen peroxide.
About the authors
A. S. Kashuba
AO NPO Orion
Author for correspondence.
Email: orion_kashuba@mail.ru
Russian Federation, Moscow, 111538
E. V. Permikina
AO NPO Orion
Email: orion_kashuba@mail.ru
Russian Federation, Moscow, 111538
S. V. Golovin
AO NPO Orion
Email: orion_kashuba@mail.ru
Russian Federation, Moscow, 111538
M. R. Lakmanova
AO NPO Orion
Email: orion_kashuba@mail.ru
Russian Federation, Moscow, 111538
A. V. Pogozheva
AO NPO Orion
Email: orion_kashuba@mail.ru
Russian Federation, Moscow, 111538
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