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Authors
Vol 64, No 9 (2019)
Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs
Iakovleva N.I., Nikonov A., Boltar K.O., Sednev M.V.
PDF
(Eng)
Vol 61, No 3 (2016)
Characteristics of heteroepitaxial structures AlxGa1–xN for p–i–n diode focal plane arrays
Smirnov D.V., Boltar K.O., Sednev M.V., Sharonov Y.P.
PDF
(Eng)
Vol 64, No 3 (2019)
Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures
Iakovleva N.I.
PDF
(Eng)
Vol 61, No 3 (2016)
Temperature dependence of diffusion length in MCT epitaxial layers
Nikiforov I.A., Nikonov A.V., Boltar K.O., Iakovleva N.I.
PDF
(Eng)
Vol 63, No 9 (2018)
Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures
Iakovleva N.I., Boltar K.O., Nikonov A.V., Egorov A.V.
PDF
(Eng)
Vol 61, No 3 (2016)
Focal plane arrays mesastructures formation by ion-beam etching
Sednev M.V., Boltar K.O., Sharonov Y.P., Lopukhin A.A.
PDF
(Eng)
Vol 63, No 9 (2018)
Current–Voltage Characteristics of n-B-p Structures with Absorbing In0.53Ga0.47As Layer
Sednev M.V., Boltar K.O., Irodov N.A., Demidov S.S.
PDF
(Eng)
Vol 61, No 3 (2016)
Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures
Iakovleva N.I., Boltar K.O., Sednev M.V., Patrashin A.I., Irodov N.A.
PDF
(Eng)
Vol 62, No 9 (2017)
Formation of guard ring of avalanche photodiode based on the InGaAs/InP heterostructure
Budtolaev A.K., Grishina T.N., Khakuashev P.E., Chinareva I.V.
PDF
(Eng)
Vol 62, No 3 (2017)
Independent operation time of photodetectors of the (3—5)-μm spectral band based on InSb and CdHgTe heteroepitaxial structures
Filatov A.V., Susov E.V., Karpov V.V., Zhilkin V.A., Ljubchenko S.P., Kusnezov N.S., Marushchenko A.V.
PDF
(Eng)
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